This 112 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 717 to 850 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 717 to 850 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

Features

 High terminal impedances for optimal broadband performance

 Advanced high performance in−package Doherty

 Improved linearized error vector magnitude with next generation signal

 Able to withstand extremely high output VSWR and broadband operating

conditions

 Plastic package