1 General description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications

requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 1880 MHz

band. There is no guarantee of performance when this part is used in applications designed outside of these

frequencies.

2 Features and benefits

• High terminal impedances for optimal broadband performance

• Advanced high performance in-package Doherty

• Improved linearized error vector magnitude with next generation signal

• Able to withstand extremely high output VSWR and broadband operating conditions

• Plastic package

3 Typical performance

VDD = 48 Vdc, IDQA = 300 mA, VGSB = -5.4 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01 % Probability on

CCDF.[1]

Table 1. 1800 MHz — Typical Doherty single-carrier W-CDMA reference circuit performance