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NAND512R3A2CZA6F中文资料

厂家型号

NAND512R3A2CZA6F

文件大小

1270.65Kbytes

页面数量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

数据手册

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生产厂商

NUMONYX

NAND512R3A2CZA6F数据手册规格书PDF详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

NAND512R3A2CZA6F产品属性

  • 类型

    描述

  • 型号

    NAND512R3A2CZA6F

  • 制造商

    Micron Technology Inc

  • 功能描述

    SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

更新时间:2026-2-13 11:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST
1923+
BGA
12008
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NA
8800
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16+
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4000
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23+
FBGA
8560
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2447
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100500
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23+
BGA
3000
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23+
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50000
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20000
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0939+
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1
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3000
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