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NAND512R3A2CZA6中文资料

厂家型号

NAND512R3A2CZA6

文件大小

916.59Kbytes

页面数量

57

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

IC FLASH 512MBIT 63VFBGA

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

NAND512R3A2CZA6数据手册规格书PDF详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

NAND512R3A2CZA6产品属性

  • 类型

    描述

  • 型号

    NAND512R3A2CZA6

  • 功能描述

    IC FLASH 512MBIT 63VFBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2025-10-25 8:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
NUMONYX
2023+
BGA
53500
正品,原装现货
ST
25+
BGA
6500
十七年专营原装现货一手货源,样品免费送
ST(意法)
24+
N/A
8048
原厂可订货,技术支持,直接渠道。可签保供合同
16+
BGA
2500
进口原装现货/价格优势!
ST
17+
BGA
6200
100%原装正品现货
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST
1923+
BGA
5896
原装进口现货库存专业工厂研究所配单供货
ST
23+
BGA
3000
原装正品假一罚百!可开增票!
ST/意法
24+
BGA
60000
全新原装现货