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NAND512R3A2CZA6E中文资料
NAND512R3A2CZA6E数据手册规格书PDF详情
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK® packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
NAND512R3A2CZA6E产品属性
- 类型
描述
- 型号
NAND512R3A2CZA6E
- 功能描述
IC FLASH 512MBIT 63VFBGA
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 产品变化通告
Product Discontinuation 26/Apr/2010
- 标准包装
136
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步,DDR II
- 存储容量
18M(1M x 18)
- 速度
200MHz
- 接口
并联
- 电源电压
1.7 V ~ 1.9 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
165-TBGA
- 供应商设备封装
165-CABGA(13x15)
- 包装
托盘
- 其它名称
71P71804S200BQ
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NUMONYX |
21+ |
BGA |
10000 |
原装现货假一罚十 |
|||
NUMONYX |
24+ |
BGA |
204 |
原装现货假一赔十 |
|||
NUMONYX |
22+ |
BGA |
16800 |
全新进口原装现货,假一罚十 |
|||
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
ST |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
STM |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
STMICRO |
24+ |
1257 |
|||||
ST |
2018+ |
BGA |
6528 |
承若只做进口原装正品假一赔十! |
|||
ST |
6000 |
面议 |
19 |
DIP/SMD |
|||
STM |
22+ |
BGA |
22108 |
原装正品现货 |
NAND512R3A2CZA6E 资料下载更多...
NAND512R3A2CZA6E 芯片相关型号
- 37-05/Y5C-ARTC
- 39-06-A5C-AQSC
- 40-01/G4C-AQSB
- ICS8535-31
- ICS8535AG-31LFT
- ICS8535AG-31T
- MGB-035M5FC
- MGB-123L5FC
- MPXM-250225K10F
- MPXM-275125K10F
- NAND08GW3C4AN6E
- NAND08GW3C4AZL1E
- NAND08GW3C4BN1E
- NAND08GW3C4BZL1E
- NCP1230P133
- NCP5104DR2G
- SM320C40TABM50/10
- SMC032AF
- SMC064BF
- SMC128AF
- SMC128BF
- SMC256BF
- SMJ320C40TABM50/10
- SMS128AFA5E
- SN74LV573ATDGVR
- SNJ54ALS541J
- UR5516A-SH2-R
- WI20C222J100N
- WI25C502J100N
- WI32C322J100N
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numonyx
Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产