DESCRIPTION

NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange.

FEATURES

• Internal input matching to achieve high power gain

• Ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability