1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• 1.8 kV ESD protected

1.3 Applications

• Relay driver

• High-speed line driver

• High-side loadswitch

• Switching circuits