1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• Very low Drain-Source on-state resistance RDSon = 42 mΩ in high density

• 1 kV ESD protected

3. Applications

• Low-side load switch and charging switch for portable devices

• Power management in battery-driven portables

• LED driver

• DC-to-DC converters