General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Trench MOSFET technology

• Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection 1 kV

• Very low Drain-Source on-state resistance RDSon = 34 mΩ

• Very low threshold voltage of 0.65 V for portable applications

Applications

• Low-side load switch and charging switch for portable devices

• Power management in battery-driven portables

• LED driver

• DC-to-DC converters