1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection 1 kV HBM

• Drain-source on-state resistance RDSon = 350 mΩ

3. Applications

• High-side load switch and charging switch for portable devices

• Power management in battery driven portables

• LED driver

• DC-to-DC converter