1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3

(SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Leadless ultra small package 0.63mm x 0.33 mm x 0.25 mm

• Trench MOSFET technology

• Low profile (0.25 mm)

• ElectroStatic Discharge (ESD) protection typically > 1 kV HBM

3. Applications

• Battery switch

• High-speed line driver

• Low-side load switch

• Switching circuits