1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3

(SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Leadless ultra small package 0.63 x 0.33 x 0.25 mm

• Trench MOSFET technology

• Low profile (0.25 mm)

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

• Battery switch

• High-speed line driver

• High-side load switch

• Switching circuits