1. General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection > 1 kV HBM

• Drain-source on-state resistance RDSon = 1.02 Ω

3. Applications

• Relay driver

• High-speed line driver

• High-side load switch

• Switching circuits