1. General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

3. Applications

• Relay driver

• High-speed line driver

• High-side load switch

• Switching circuits