1.1 General description

Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for high frequency

applications due to fast switching

characteristics

Suitable for use in compact designs

due to low profile

1.3 Applications

DC-to-DC converters

Motor and relay drivers