1. General description

The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron-

Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode

device offering superior performance.

2. Features and benefits

• Enhancement mode - normally-off power switch

• Bi-directional device

• Ultra high switching speed capability

• Ultra-low on-state resistance

• RoHS, Pb-free, REACH-compliant

• High efficiency and high power density

• Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm

3. Applications

• High-side load switch

• OVP protection in smart phone USB port

• Power switch circuits

• Stand-by power system