1. General description

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15

bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering

superior performance.

2. Features and benefits

• Enhancement mode - normally-off power switch

• Ultra high frequency switching capability

• No body diode

• Low gate charge, low output charge

• Qualified for standard applications

• ESD protection

• RoHS, Pb-free, REACH-compliant

• High efficiency and high power density

• Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

3. Applications

• High power density and high efficiency power conversion

• AC-to-DC converters, (secondary stage)

• High frequency DC-to-DC converters in 48 V systems

• Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

• Datacom and telecom (AC-to-DC and DC-to-DC) converters

• Motor drives

• LiDAR (non-automotive)

• Class D audio amplifiers