1. General description

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a

normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and

low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2. Features and benefits

• Ultra-low reverse recovery charge

• Simple gate drive (0 V to +10 V or +12 V)

• Robust gate oxide (±20 V capability)

• High gate threshold voltage (+4 V) for very good gate bounce immunity

• Very low source-drain voltage in reverse conduction mode

• Transient over-voltage capability

3. Applications

• Hard and soft switching converters for industrial and datacom power

• AC/DC Bridgeless totem-pole PFC

• DC/DC High-frequency resonant converters

• Datacom and telecom (AC/DC and DC/DC) converters

• Solar (PV) inverters

• Servo motor drives

• TV PSU and LED drivers