1. General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Extended temperature range Tj = 175 °C

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Tin-plated 100 solderable side pads for optical solder inspection

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

• Trench MOSFET technology

• AEC-Q101 qualified

3. Applications

• Relay driver

• High-speed line driver

• High-side loadswitch

• Switching circuits