1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6

(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Extended temperature range Tj = 175 °C

• Side wettable flanks for optical solder inspection

• ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

• Trench MOSFET technology

• AEC-Q101 qualified

3. Applications

• DC to DC conversion

• High-speed line driver

• Low-side load switch

• Switching circuits