1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6

(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Extended temperature range Tj = 175 °C

• Trench MOSFET technology

• Very fast switching

• Side wettable flanks for optical solder inspection

• ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)

• AEC-Q101 qualified

3. Applications

• DC to DC conversion

• High-speed line driver

• High-side load switch

• Switching circuits