DESCRIPTION

The μPA2782GR is N-Channel Power MOSFET, which built a

Schottky Barrier Diode inside.

This product is designed for synchronous DC/DC converter

application.

FEATURES

• Built a Schottky Barrier Diode

• Low on-state resistance

RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A)

RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A)

RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)

• Low Ciss: Ciss = 660 pF TYP.

• Small and surface mount package (Power SOP8)