Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

The NXH020P120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 m/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins