LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package designed for CFP transceiver. FEATURES • Internal optical isolator

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

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Optoelectronics

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

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T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

Low Distortion 1.0 GHz Differential Amplifier

PRODUCT DESCRIPTION The AD8350 series are high performance fully-differential amplifiers useful in RF and IF circuits up to 1000 MHz. The amplifier has excellent noise figure of 5.9 dB at 250 MHz. It offers a high output third order intercept (OIP3) of +28 dBm at 250 MHz. Gain versions of 15 dB a

Low Distortion 1.0 GHz Differential Amplifier

PRODUCT DESCRIPTION The AD8350 series are high performance fully-differential amplifiers useful in RF and IF circuits up to 1000 MHz. The amplifier has excellent noise figure of 5.9 dB at 250 MHz. It offers a high output third order intercept (OIP3) of +28 dBm at 250 MHz. Gain versions of 15 dB a

3M??D Sub Socket

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Low Distortion 1.0 GHz Differential Amplifier

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