LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION The NX8349TS, NX8349YK, NX8349XK are 1 310 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver. FEATURES • Internal optical

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

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700 MHz to 2700 MHz Quadrature Modulator

PRODUCT DESCRIPTION The AD8349 is a silicon, monolithic, RF quadrature modulator that is designed for use from 700 MHz to 2700 MHz. Its excellent phase accuracy and amplitude balance enable high performance direct RF modulation for communication systems. The differential LO input signal is buffe

400 MHz to 6 GHz Broadband Quadrature Modulator

GENERAL DESCRIPTION The ADL5375 is a broadband quadrature modulator designed for operation from 400 MHz to 6 GHz. Its excellent phase accuracy and amplitude balance enable high performance intermediate frequency or direct radio frequency modulation for communication systems. FEATURES Outpu

300 MHz to 1000 MHz Quadrature Modulator

GENERAL DESCRIPTION The ADL5370 is the first in the fixed-gain quadrature modulator (F-MOD) family designed for use from 300 MHz to 1000 MHz. Its excellent phase accuracy and amplitude balance enable high performance intermediate frequency or direct radio frequency modulation for communication sy

Correcting Imperfections in IQ Modulators to Improve RF Signal Fidelity

INTRODUCTION The in-phase and quadrature modulator (IQ modulator) is a key component in modern wireless transmitters. It provides a convenient method for modulating data bits or symbols onto an RF carrier. IQ upconversion has become the architecture of choice for implementing transmitter signal c

Wire-Thread-Inserts

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