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位置：首页 > IC中文资料第7073页 > NX6508

型号 功能描述 生产厂家&企业 LOGO 操作
NX6508

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508

NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

文件：332.22 Kbytes Page：4 Pages

CEL

California Eastern Labs

NX6508GH47

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH49

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH51

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH53

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH55

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH57

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH59

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GH61

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK47

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK49

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK51

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK53

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK55

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK57

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK59

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508GK61

LASER DIODE

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES •

RENESAS

瑞萨

NX6508-AZ

NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

文件：332.22 Kbytes Page：4 Pages

CEL

California Eastern Labs

6508FE

Security & Sound, #22-10c BC, Shielded, CMP

Product Description Security & Sound Cable, Plenum-CMP, 10-22 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord

BELDEN

百通

6508UE

Security & Sound, #22-10c, BC, CMP

Product Description Security & Sound Cable, Plenum-CMP 10-22 AWG stranded bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord

BELDEN

百通

AON6508

30V N-Channel AlphaMOS

General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS 30V ID (at VGS=10V)

AOSMD

万国半导体

6508A

Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options

文件：65.129 Kbytes Page：2 Pages

Microsemi

美高森美

AP6508

500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER

文件：999.84 Kbytes Page：14 Pages

DIODES

美台半导体

NX6508产品属性

  • 类型

    描述

  • 型号

    NX6508

  • 制造商

    CEL

  • 制造商全称

    CEL

  • 功能描述

    NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

NX6508供应商更多...

更新时间：2025-8-18 15:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市澳亿芯电子科技有限公司
NX6508GH
NEC
04+
DIP
9
普通
询价
深圳市科恒伟业电子有限公司
NX6508GH
NEC
2016+
DIP
6528
只做进口原装现货!假一赔十!
询价
深圳诚思涵科技有限公司
NX7002AK
恩XP
18+
SOT23-3
85600
保证进口原装可开17%增值税发票
询价
天津市博通航睿技术有限公司
NX6A0AE01A1AF
WCR
7
优势货源原装正品
询价
深圳市永贝尔科技有限公司
NX6508
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
深圳市华来深电子有限公司
NX6A0AE01A1AF
TE/TYCO/AMP/RAYCHEM/美国泰科电
23+
NA
5000
公司只做原装,可配单
询价
深圳市近平电子有限公司
NX6A0AE01A1AF
WINCHESTERC
6000
面议
19
DIP/SMD
询价
北京京北通宇电子元件有限公司
NX6A0AE01A1AF
NEXTRON
24+
con
10000
查现货到京北通宇商城
询价
深圳市湘达电子有限公司
NX7002AK
恩XP
新年份
SOT23
3500
绝对全新原装现货,欢迎来电查询
询价
深圳市凌旭科技有限公司
NX7002AK
恩XP
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价

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