位置：首页 > IC中文资料第7073页 > NX6508
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NX6508 | LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 |   | |
NX6508 | NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS 文件：332.22 Kbytes Page：4 Pages | CEL | | |
NX6508 | NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS | CEL | | |
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
LASER DIODE 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application. FEATURES • | RENESAS 瑞萨 | | ||
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS 文件：332.22 Kbytes Page：4 Pages | CEL | | ||
Security & Sound, #22-10c BC, Shielded, CMP Product Description Security & Sound Cable, Plenum-CMP, 10-22 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord | BELDEN 百通 | | ||
Security & Sound, #22-10c, BC, CMP Product Description Security & Sound Cable, Plenum-CMP 10-22 AWG stranded bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord | BELDEN 百通 | | ||
30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS 30V ID (at VGS=10V) | AOSMD 万国半导体 | | ||
Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options 文件：65.129 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER 文件：999.84 Kbytes Page：14 Pages | DIODES 美台半导体 | |
NX6508产品属性
- 类型
描述
- 型号
NX6508
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
20+ |
SOT-23 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
恩XP |
24+ |
SOT23 |
65300 |
一级代理/放心购买! |
|||
NEXTRON |
24+ |
con |
2500 |
优势库存,原装正品 |
|||
恩XP |
21+ |
SOT-23 |
3000 |
百域芯优势 实单必成 可开13点增值税 |
|||
正凌 |
21+ |
50 |
只做原装鄙视假货15118075546 |
||||
WCR |
7 |
优势货源原装正品 |
|||||
恩XP |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
恩XP |
18+ |
SOT23-3 |
85600 |
保证进口原装可开17%增值税发票 |
|||
TE/TYCO/AMP/RAYCHEM/美国泰科电 |
23+ |
NA |
5000 |
公司只做原装,可配单 |
|||
恩XP |
23+ |
SOT23 |
10089 |
优势 /原装现货长期供应现货支持 |
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NX6508规格书下载地址
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焕盛达-专注原装 真芯服务；当天下单，当天发货；
2020-8-13
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