LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION

DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. FEATURES • Optical output power Po = 14.0 mW • Low threshold current lth = 10 mA • Differential efficiency ηd = 0.25 W/A • Wide operating temperat

LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE

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Optoelectronics

LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION

文件：165.93 Kbytes Page：8 Pages

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

CUSTOMER PRODUCT SPECIFICATION

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30V N-Channel MOSFET

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