RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB Minimum Efficienc

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

CUSTOMER PRODUCT SPECIFICATION

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30V N-Channel MOSFET

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N-Channel 30-V (D-S) MOSFET

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