LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. FEATURES • Optical output power PO = 8.5 mW • Low threshold current Ith = 8 mA • Differential efficiency ηd = 0.23 W/A • Wide operating temperatur

Optoelectronics

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

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LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

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1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

文件：899.27 Kbytes Page：6 Pages

Replaceable Tip Precision Electronic Probe

FEATURES: • Miniature probe is the perfect size for probing tiny, high-density circuits. • Gold plated pogo pin tip keeps constant pressure on test point for consistent readings. • Replaceable probe tips. • Safety design complies with all the latest standards. • Flexible Silicone insulated wi

Security & Sound, 3 Pair 18 AWG, BC, Individually Shielded, CMP

Product Description Security, Pro Audio & Intercom Cable, Plenum-CMP, 3-18 AWG stranded bare copper pairs with FEP insulation, Individually Beldfoil® shielded and Flamarrest® jacket

40.5 ??43.5 GHz SMT Packaged Variable Gain Amplifi er

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9 dB Maximum Gain

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9 dB Maximum Gain

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