位置：首页 > IC中文资料第9483页 > NX6314EH
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NX6314EH | LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS DESCRIPTION The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. FEATURES • Optical output power PO = 5.0 mW • Low threshold current Ith = 10 mA • Differential efficiency ηd = 0.4 W/A • Wide operating temperatur | RENESAS 瑞萨 |   | |
NX6314EH | 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS 文件：903.57 Kbytes Page：6 Pages | CEL | | |
NX6314EH | Optoelectronics | RENESAS 瑞萨 | | |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE 文件：205.61 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS 文件：903.57 Kbytes Page：6 Pages | CEL | | ||
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS | CEL | | ||
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Male/Female Combination Terminals - 27 Gauge 文件：210.26 Kbytes Page：1 Pages | HEYCO | | ||
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NX6314EH产品属性
- 类型
描述
- 型号
NX6314EH
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Renesas |
21+ |
- |
40 |
只做原装鄙视假货15118075546 |
|||
RENESAS |
CAN4 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS/瑞萨 |
2402+ |
CAN4 |
8324 |
原装正品!实单价优! |
|||
恩XP |
18+ |
SOT23-3 |
85600 |
保证进口原装可开17%增值税发票 |
|||
WCR |
7 |
优势货源原装正品 |
|||||
TE/TYCO/AMP/RAYCHEM/美国泰科电 |
23+ |
NA |
5000 |
公司只做原装,可配单 |
|||
恩XP |
20+ |
SOT-23 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
NEXTRON |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
NEC |
23+ |
DIP |
42500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
NX6314EH规格书下载地址
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2020-8-13
DdatasheetPDF页码索引
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