型号 功能描述 生产厂家 企业 LOGO 操作
NX6306

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hi

RENESAS

瑞萨

NX6306

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

文件:388.69 Kbytes Page:5 Pages

CEL

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hi

RENESAS

瑞萨

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hi

RENESAS

瑞萨

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hi

RENESAS

瑞萨

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hi

RENESAS

瑞萨

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS

文件:401.27 Kbytes Page:5 Pages

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS

文件:401.27 Kbytes Page:5 Pages

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

文件:388.69 Kbytes Page:5 Pages

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

文件:388.69 Kbytes Page:5 Pages

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

文件:388.69 Kbytes Page:5 Pages

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

文件:388.69 Kbytes Page:5 Pages

CEL

1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

CEL

Security & Sound, #18-8c, BC, Shielded, CMP

Product Description Security & Sound Cable, Plenum-CMP, 8-18 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord

BELDEN

百通

Security & Sound, #18-8c, BC, CMP

Product Description Security & Sound Cable, Plenum-CMP 8-18 AWG stranded bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord

BELDEN

百通

Male/Female Combination Terminals - 27 Gauge

文件:210.26 Kbytes Page:1 Pages

Heyco

24 (7/32) AWG Tinned Copper

文件:409.22 Kbytes Page:4 Pages

ALPHAWIRE

Varnished Chokes

文件:426.78 Kbytes Page:1 Pages

Bourns

伯恩斯

NX6306产品属性

  • 类型

    描述

  • 型号

    NX6306

  • 制造商

    CEL

  • 制造商全称

    CEL

  • 功能描述

    1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

更新时间:2025-11-26 11:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WINCHESTERC
6000
面议
19
DIP/SMD
RENESAS
CAN4
68500
一级代理 原装正品假一罚十价格优势长期供货
RENESAS/瑞萨
23+
42500
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS/瑞萨
23+
CAN4
50000
全新原装正品现货,支持订货
RENESAS/瑞萨
23+
CAN4
89630
当天发货全新原装现货
NEC
24+
DIP
5000
全现原装公司现货
RENESAS/瑞萨
2402+
CAN4
8324
原装正品!实单价优!
NEC
08+PBF
DIP
20
现货
RENESAS/瑞萨
21+
CAN4
10000
原装现货假一罚十
Renesas
21+
-
40
只做原装鄙视假货15118075546

NX6306数据表相关新闻