1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 7 mA • Differential

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATIONS • S

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：190.24 Kbytes Page：7 Pages

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 7 mA • Differential

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATIONS • S

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATIONS • S

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 7 mA • Differential

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：190.24 Kbytes Page：7 Pages

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：190.24 Kbytes Page：7 Pages

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 230 uA Dual Rail-to-Rail, Voltage Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5302/AD5312/AD5322 are dual 8-, 10-, and 12-bit buffered voltage output DACs in a 10-lead MSOP that operate from a single 2.5 V to 5.5 V supply, consuming 230 μA at 3 V. Their on-chip output amplifiers allow the outputs to swing rail to-rail with a slew rate of 0.7 V/μs.

NTE5326/NTE5327/NTE5328 Silicon Bridge Rectifier, Single-Phase, 25 Amp

Features: • Superior Thermal Design • Surge Overload Rating: 400A (Peak) • Hole Through for #8 Screw • Silverplated Copper Terminals

Silicon Bridge Rectifier, Single-Phase, 25 Amp

Features: ● Superior Thermal Design ● Surge Overload Rating: 400A (Peak) ● Hole Through for #8 Screw ● Silverplated Copper Leads

SOT23-6W 120mA 2ch LDO REGULATORS

OUTLINE The R5322N Series are voltage regulator ICs with high output voltage accuracy, low supply current, low dropout, and high ripple rejection by CMOS process. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors for setting Output Voltage, a