型号 功能描述 生产厂家 企业 LOGO 操作
NVMTS0D4N04C

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

ONSEMI

安森美半导体

NVMTS0D4N04C

单 N 沟道功率 MOSFET 40V,558A,0.45mΩ

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

ONSEMI

安森美半导体

单 N 沟道,功率 MOSFET,40V,553.8A,0.4mΩ

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件:399.28 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件:400.4 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件:400.4 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件:399.28 Kbytes Page:7 Pages

ONSEMI

安森美半导体

更新时间:2026-1-5 10:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
PowerTDFN-8
12808
公司只做原装正品,假一赔十
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
25+
标准封装
8000
原装,请咨询
ON(安森美)
26+
NA
60000
只有原装 可配单
ON(安森美)
24+
DFNW-8
6000
全新原厂原装正品现货,低价出售,实单可谈
ONSemi
25+
N/A
15013
原装现货17377264928微信同号
ON
21+正纳原装现货
DFNW-8
30000
十年以上分销商原装进口件服务型
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
OTHER
24+
原装
10000
ON
24+
NA
3000
进口原装 假一罚十 现货

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