MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

单 N 沟道，功率 MOSFET，40V，553.8A，0.4mΩ

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件：399.28 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

文件：400.4 Kbytes Page：7 Pages

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

文件：399.28 Kbytes Page：7 Pages