型号 功能描述 生产厂家 企业 LOGO 操作
NTHL160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

ONSEMI

安森美半导体

更新时间:2025-9-27 15:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay(威世)
23+
N/A
11800
VISHAY
23+
SMD
20000
原装正品,假一罚十
VISHAY(威世)
2021+
0402
504
ON/安森美
22+
TO-247
9000
原装正品,支持实单!
VISHAY/威世
23+
0402
8080
原装正品,支持实单
ON(安森美)
2447
6-PowerWDFN
115000
30个/管一级代理专营品牌!原装正品,优势现货,长期
ON(安森美)
25+
TO-247-3
500000
源自原厂成本,高价回收工厂呆滞
VISHAY/威世
23+
SMD
8160
原厂原装
ON
24+
NA
3000
进口原装 假一罚十 现货
VISHAY/威世
0402
6000
只做原装正品,卖元器件不赚钱交个朋友

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