Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-3L

Features  Typ. RDS(on) = 29 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 107 nC)  High Speed Switching with Low Capacitance (Coss = 106 pF)  100 Avalanche Tested  This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L

Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on