Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3, TO-247-3L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 139 nC) • Low Effective Output Capacitance (Coss = 141 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Typical Applic

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features • Typ. RDS(on) = 22 m • Low switching losses (Typ. EON 485 J at 40 A, 800 V) • 100 Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Systems

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 22 m • Low switching losses (Typ. EON 485 J at 40 A, 800 V) • 100 Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Systems

Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 22 m • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 146 pF) • 100 Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible

SiC N-Channel MOSFET

FEATURES ·Typ. RDS(on) = 960 mΩ ·100 Avalanche Tested ·RoHS Compliant APPLICATIONS ·Solar Inverters ·Electric Vehicle Charging Stations ·Uninterruptible Power Supplies (UPS) ·Energy Storage Systems ·Switch Mode Power Supplies (SMPS)