互补，ChipFET™，功率 MOSFET，20V

This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency.The performance is ideally suited for portable or handheld applications. • Complentary N-Channel and P-Channel MOSFET\n• Small Size, 40% Smaller than TSOP-6 Package\n• Leadless SMD Package Featuring Complementary Pair\n• ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages\n• Low RDS(on) in a ChipFET™ Package for High Efficiency Performa;

Power MOSFET 20 V, 3.9 A / ??.0 A, Complementary ChipFET-TM

文件：89.59 Kbytes Page：10 Pages

Power MOSFET

文件：96.24 Kbytes Page：9 Pages

Power MOSFET

文件：96.24 Kbytes Page：9 Pages

Power MOSFET 20 V, 3.9 A / ??.0 A, Complementary ChipFET-TM

文件：89.59 Kbytes Page：10 Pages

Power MOSFET

文件：96.24 Kbytes Page：9 Pages

Power MOSFET 20 V, 3.9 A / ??.0 A, Complementary ChipFET-TM

文件：89.59 Kbytes Page：10 Pages

CMOS-CCD 1H Delay Line for NTSC

Description The CXL5513M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1 H delay time for NTSC chroma signals including the external lowpass filter. Features • Single 5 V power supply • Low power consumption • Built-in peripheral circuit • Built-in t

CMOS-CCD 1H Delay Line for NTSC

Description The CXL5513M/P are CMOS-CCD delay line ICs designed for processing video signals. This ICs provide a 1 H delay time for NTSC chroma signals including the external lowpass filter. Features • Single 5 V power supply • Low power consumption • Built-in peripheral circuit • Built-in t

TR909 DLC/FLC SLIC with Low Power Standby

The HC5513 is a subscriber line interface circuit which is interchangeable with Ericsson’s PBL3764 for distributed central office applications. Enhancements include immunity to circuit latch-up during hot plug and absence of false signaling in the presence of longitudinal currents. Features •

Silicon Controlled Rectifier (SCR) 5 Amp

Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward c

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free