Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6

-20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6 • Fast Switching\n• Low RDS(on)\n• Independently Connected Devices;

Power MOSFET and Schottky Diode??0 V, ??.5 A, P?묬hannel with Schottky Barrier Diode, TSOP??

文件：115.55 Kbytes Page：7 Pages

Power MOSFET and Schottky Diode??0 V, ??.5 A, P?묬hannel with Schottky Barrier Diode, TSOP??

文件：115.55 Kbytes Page：7 Pages

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipation. Applications • DC

Military Standard Connector Index

The following is a listing of circular connectors defined by US Military Specifications, cross-referenced to the applicable active or inactive part number series. The symbols in the Connector Designator column are an essential element in Glenair’s backshell part number developments.

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD