Silicon Diode, High Speed Switch

Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits.

Silicon Diode, High Speed Switch

Silicon Power Rectifier Diode, 20 Amp

Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Volt

Silicon Power Rectifier Diode, 20 Amp

Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Volt

Rectifiers

Rectifiers

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems.

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 Device marking - P93

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications