Silicon Pin Diode UHF/VHF Detector

Description: The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications. Features: ● Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat–Whisker

PIN

Description:\nThe NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications.Features:\n● Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend

Silicon Controlled Rectifiers

Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Silicon Controlled Rectifiers

Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features: Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Silicon Pin Diode VHF Band Switch

Features: ● Switching Diode in a DO34 Glass Envelope ● Intended for Band Switching in VHF Television Tuners ● Low Capacitance

SCRs

SCRs

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac

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文件：209.34 Kbytes Page：6 Pages

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文件：209.34 Kbytes Page：6 Pages

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文件：209.34 Kbytes Page：6 Pages