位置:首页 > IC中文资料第10093页 > NTE1019

型号 功能描述 生产厂家 企业 LOGO 操作
NTE1019

Integrated Circuit Module, Hybrid, Low Noise Equalizer Amp

Integrated Circuit Module, Hybrid, Low Noise Equalizer Amp Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCCmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Power Dissipation, PDmax . . . . . . . . . . . . . . .

NTE

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

PHILIPS

飞利浦

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

PHILIPS

飞利浦

METAL GATE RF SILICON FET

文件:37.52 Kbytes Page:4 Pages

SEME-LAB

METAL GATE RF SILICON FET

文件:37.52 Kbytes Page:4 Pages

SEME-LAB

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件:38.1 Kbytes Page:2 Pages

POLYFET

NTE1019产品属性

  • 类型

    描述

  • 型号

    NTE1019

  • 制造商

    NTE

  • 制造商全称

    NTE Electronics

  • 功能描述

    Integrated Circuit Module, Hybrid, Low Noise Equalizer Amp

NTE1019数据表相关新闻