isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 28V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 60 Amps, 28 Volts

文件：89.83 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 28V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET N-CH 28V 60A IPAK

Power MOSFET 60 Amps, 28 Volts

文件：89.83 Kbytes Page：10 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01773 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01771 Mbytes Page：8 Pages

Power MOSFET 60 Amps, 28 Volts

文件：89.83 Kbytes Page：10 Pages

MOSFET N-CH 28V 60A DPAK

N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V • Low gate charge ( typical 18.5 nC) • Low Crss ( typical 155 pF) • Fa

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package.

N-Channel Logic Level PWM Optimized Power MOSFET

文件：238.51 Kbytes Page：11 Pages