| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MTP50N06V |
25+ |
15 |
15 |
||||
MOTOROLA |
23+ |
NA |
315 |
专做原装正品,假一罚百! |
|||
IR |
24+ |
TO 220 |
161577 |
明嘉莱只做原装正品现货 |
|||
N/A |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON(安森美) |
23+ |
17731 |
公司只做原装正品,假一赔十 |
||||
MOTOROLA/摩托罗拉 |
00+ |
TO-220 |
122 |
||||
MOTOROLA/摩托罗拉 |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
MOT |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
MOT |
25+23+ |
TO-220 |
28626 |
绝对原装正品全新进口深圳现货 |
NTD50N06RG芯片相关品牌
NTD50N06RG规格书下载地址
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NTD50N06RG数据表相关新闻
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2019-8-8
DdatasheetPDF页码索引
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