isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，25V，65A，7.5mΩ

Power MOSFET Single N Channel, 25V, 65A, DPAK/IPAK • Low Capacitance \n• Minimize Driver Losses\n• Optimized Gate Charge\n• Minimize Switching Losses\n• Low Rds(on)\n• Minimize Conduction Losses\n• Trench Technology;

25 V, 65 A, Single N-Channel, DPAK/IPAK

文件：99.88 Kbytes Page：8 Pages

25 V, 65 A, Single N?묬hannel, DPAK/IPAK

文件：124.14 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

丝印代码：4860N；25V N -Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses Applications • VCORE Applications • DC−DC Converters • High/Low Side Switching VDS(V) =25V ID =65A (VGS = 10V) RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

N-Channel 30-V (D-S) MOSFET

文件：995.69 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.68 Kbytes Page：7 Pages

25 V, 65 A, Single N?묬hannel, DPAK/IPAK

文件：124.14 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01684 Mbytes Page：8 Pages

Series 1W Audio Power Amplifier with Shutdown Mode

文件：278.97 Kbytes Page：9 Pages

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文件：39.2 Kbytes Page：4 Pages

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文件：93.34 Kbytes Page：12 Pages

1-W MONO AUDIO POWER AMPLIFIER

文件：430.43 Kbytes Page：25 Pages

1-W MONO AUDIO POWER AMPLIFIER

文件：430.43 Kbytes Page：25 Pages