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型号 功能描述 生产厂家 企业 LOGO 操作
NTB6412ANG

N-Channel Power MOSFET 100 V, 58 A, 18.2 m廓

文件:145.42 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTB6412ANG

N-Channel Power MOSFET

文件:87 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTB6412ANG

N-Channel Power MOSFET

文件:147.88 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTB6412ANG

N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ

ONSEMI

安森美半导体

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

INTERSIL

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

INTERSIL

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

INTERSIL

Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit

The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8

INTERSIL

Bilateral Trigger Diodes (DIACS)

Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v

NTE

NTB6412ANG产品属性

  • 类型

    描述

  • 型号

    NTB6412ANG

  • 功能描述

    MOSFET NFET D2PAK 100V 58A 18MO

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-21 10:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2025+
TO-263-3
3577
全新原厂原装产品、公司现货销售
ON
23+
TO-263
2986
原厂原装正品
VB
25+
D2PAK
10000
原装现货假一罚十
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
VBSEMI/台湾微碧
23+
D2PAK
50000
全新原装正品现货,支持订货
ON
18+
TO-263
486
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
23+
TO-263-3
89630
当天发货全新原装现货
ON Semiconductor
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
ON
22+
TO-263
20000
公司只做原装 品质保障
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十

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