位置:首页 > IC中文资料第3382页 > NTB6412ANG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTB6412ANG | N-Channel Power MOSFET 100 V, 58 A, 18.2 m廓 文件:145.42 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
NTB6412ANG | N-Channel Power MOSFET 文件:87 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
NTB6412ANG | N-Channel Power MOSFET 文件:147.88 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | ||
NTB6412ANG | N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ | ONSEMI 安森美半导体 | ||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v | NTE |
NTB6412ANG产品属性
- 类型
描述
- 型号
NTB6412ANG
- 功能描述
MOSFET NFET D2PAK 100V 58A 18MO
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2025+ |
TO-263-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON |
23+ |
TO-263 |
2986 |
原厂原装正品 |
|||
VB |
25+ |
D2PAK |
10000 |
原装现货假一罚十 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VBSEMI/台湾微碧 |
23+ |
D2PAK |
50000 |
全新原装正品现货,支持订货 |
|||
ON |
18+ |
TO-263 |
486 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
23+ |
TO-263-3 |
89630 |
当天发货全新原装现货 |
|||
ON Semiconductor |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
ON |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
ON |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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NTB6412ANG规格书下载地址
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