型号 功能描述 生产厂家 企业 LOGO 操作
NT5DS64M8DS-5T

512Mb DDR SDRAM

Feature z Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) z 4 internal memory banks for concurrent operation. z CAS Latency: 2, 2.5 and 3 z Double Data Rate Architecture z Bidirectional data strobe (DQS) is transmitted and received with data, to be used

Nanya

南亚科

512Mb DDR SDRAM

Feature z Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) z 4 internal memory banks for concurrent operation. z CAS Latency: 2, 2.5 and 3 z Double Data Rate Architecture z Bidirectional data strobe (DQS) is transmitted and received with data, to be used

Nanya

南亚科

更新时间:2025-12-30 14:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NANYA/南亚
2450+
TSOP66
9485
只做原装正品现货或订货假一赔十!
NANYA
25+23+
TSOP66
37015
绝对原装正品全新进口深圳现货
NANYA
17+
TSSOP66
60000
保证进口原装可开17%增值税发票
NANYA/南亚
24+
TSOP66
54000
郑重承诺只做原装进口现货
NANYA
23+
TSOP
8560
受权代理!全新原装现货特价热卖!
NANYA
21+
TSOP66
10000
原装现货假一罚十
NANYA
11+
TSOP
30
普通
NANYA/南亚
24+
NA/
16
优势代理渠道,原装正品,可全系列订货开增值税票
NANYA/南亚
TSOP66
23+
6000
原装现货有上库存就有货全网最低假一赔万
NANYA/南亚
25+
TSOP66
25000
代理原装现货,假一赔十

NT5DS64M8DS-5T数据表相关新闻