型号 功能描述 生产厂家 企业 LOGO 操作
NT5DS64M8DS-5T

512Mb DDR SDRAM

Feature z Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) z 4 internal memory banks for concurrent operation. z CAS Latency: 2, 2.5 and 3 z Double Data Rate Architecture z Bidirectional data strobe (DQS) is transmitted and received with data, to be used

NANYA

南亚科

512Mb DDR SDRAM

Feature z Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) z 4 internal memory banks for concurrent operation. z CAS Latency: 2, 2.5 and 3 z Double Data Rate Architecture z Bidirectional data strobe (DQS) is transmitted and received with data, to be used

NANYA

南亚科

更新时间:2026-3-14 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NANYA/南亚
24+
TSOP66
880000
明嘉莱只做原装正品现货
NANYA
22+
TSOP66
20000
公司只做原装 品质保障
NANYA
25+23+
TSOP66
37015
绝对原装正品全新进口深圳现货
NANYA/南亚
25+
TSOP66
25000
代理原装现货,假一赔十
NANYA/南亚
2450+
TSOP66
9485
只做原装正品现货或订货假一赔十!
NANYA/南亚
24+
TSOP66
54000
郑重承诺只做原装进口现货
NANYA/南亚
24+
TSOP66
9600
原装现货,优势供应,支持实单!
NANYA
17+
TSSOP66
60000
保证进口原装可开17%增值税发票
NANYA/南亚
2447
TSOP66
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Nanya(南亚)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

NT5DS64M8DS-5T数据表相关新闻