The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power consumption (Normal or Low power) and pack

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power consumption (Normal or Low power) and pack

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power consumption (Normal or Low power) and pack

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power consumption (Normal or Low power) and pack

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V ), refresh cycle (2K Ref), access time (-5 or -6), power consumption (Normal or Low power) and pack