100 V, 3.0 A Low VCE(sat) NPN Bipolar Junction Transistor

封装/外壳：SOT-1023，4-LFPAK 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 3A LFPAK4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.05V(Max) @IC= 1A APPLICATIONS · Switching Regulators · Converters · DC−DC converters

Silicon PNP epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) ● Reduction of the mounting area and assembly cost by one half. ■ Basic P

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) ● Reduction of the mounting area and assembly cost by one half. ■ Basic P

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) ● Reduction of the mounting area and assembly cost by one half.