Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.05V(Max) @IC= 1A APPLICATIONS · Switching Regulators · Converters · DC−DC converters

3 A，100 V 低 VCE(sat) NPN 晶体管

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb-Free and are RoHS Compliant;

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 3A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100 V, 3.0 A, Low VCE(sat) NPN Transistor

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100 V, 3.0 A, Low VCE(sat) NPN Transistor

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NPN Transistor

文件：77.2 Kbytes Page：5 Pages

100 V, 3.0 A, Low VCE(sat) NPN Transistor

文件：116.71 Kbytes Page：5 Pages

NPN Transistor

文件：77.2 Kbytes Page：5 Pages

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) ● Reduction of the mounting area and assembly cost by one half. ■ Basic P

Silicon PNP epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) ● Reduction of the mounting area and assembly cost by one half. ■ Basic P

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) ● Reduction of the mounting area and assembly cost by one half.